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| PD - 91572A IRG4RC10U INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * Industry standard TO-252AA package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 2.15V @VGE = 15V, IC = 5.0A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 8.5 5.0 34 34 20 110 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. --- --- 0.3 (0.01) Max. 3.3 50 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 8/30/99 IRG4RC10U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 14 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.54 -- V/C VGE = 0V, IC = 1.0mA -- 2.15 2.6 IC = 5.0A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.61 -- IC = 8.5A See Fig.2, 5 V -- 2.30 -- IC = 5.0A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -8.7 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 2.8 4.2 -- S VCE = 100V, IC = 5.0A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current -- -- 2.0 A VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 15 22 IC = 5.0A 2.6 4.0 nC VCC = 400V See Fig. 8 5.8 8.7 VGE = 15V 19 -- 11 -- TJ = 25C ns 116 240 IC = 5.0A, VCC = 480V 81 180 VGE = 15V, RG = 100 0.08 -- Energy losses include "tail" 0.16 -- mJ See Fig. 9, 10, 14 0.24 0.36 18 -- TJ = 150C, 14 -- IC = 5.0A, VCC = 480V ns 180 -- VGE = 15V, RG = 100 150 -- Energy losses include "tail" 0.36 -- mJ See Fig. 11, 14 7.5 -- nH Measured 5mm from package 270 -- VGE = 0V 21 -- pF VCC = 30V See Fig. 7 3.5 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 100, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4RC10U 4.0 F or b ot h: T ria ng u la r w av e: I 3.0 D uty c ycle : 5 0% T J = 1 25 C T A = 5 5C Ga te drive as s p e cified P ow e r D is s ip at i on = 1 .4 W Typ ic al F R -4 b oa rd m o u n t Load Current ( A ) C lam p vo lta g e: 80% o f rate d S q u are w ave: 2.0 6 0% o f rate d v o lta g e I 1.0 Ide al d io des 0.0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 oC 10 TJ = 150 oC I C , Collector-to-Emitter Current (A) 10 TJ = 150 o C 1 TJ = 25 oC V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 11 12 13 14 0.1 1 V GE = 15V 20s PULSE WIDTH 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4RC10U 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 10 A Maximum DC Collector Current(A) 4.0 6 3.0 4 I C = 5.0 A 5A I C = 2.5 A 2.0 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10U 500 400 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A 16 C, Capacitance (pF) 300 Cies 12 200 8 100 Coes Cres 4 0 1 10 0 0 4 8 12 16 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.30 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.26 I C = 5.0A 10 100 RG = 100Ohm VGE = 15V VCC = 480V 1 IC = 10 A IC = 5.0 A 5A IC = 2.5 A 0.22 0.18 0.1 0.14 0.10 50 R Gate Resistance ( ) RGG,,Gate Resistance (Ohm) 60 70 80 90 100 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC10U 1.0 0.6 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 0.8 VGE = 100 100Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0.4 0.2 SAFE OPERATING AREA 0.0 0 2 4 6 8 10 12 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA L 50V 10 0 0V VC * D .U .T. RL = 0 - 480V 480V 4 X I C@25C 480F 960V * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 6 www.irf.com IRG4RC10U 9 0% 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50) -A5.46 (.2 15 ) 5.21 (.2 05 ) 4 6 .4 5 (.24 5) 5 .6 8 (.22 4) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 3 -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) M AMB 0 .5 1 (.02 0) M IN . 10 .42 (.41 0) 9.40 (.3 70) LEAD ASSIGNMENTS 2.38 (.0 94 ) 2.19 (.0 86 ) 1.1 4 (.045 ) 0.8 9 (.035 ) 0.58 (.0 23) 0.46 (.0 18) 1.2 7 (.050 ) 0.8 8 (.035 ) L EA D AS-SIG NM EN TS 1 GATE 1 - G A TE 2 - COLLECTOR 2 - D R A IN 3 - EMITTER 3 - S O U R CE 4 - COLLECTOR 4 - D R A IN 0.5 8 (.023 ) 0.4 6 (.018 ) N O TES : 1 D IM E N SIO N ING & TO L ER A NC IN G P ER AN S I Y 14.5 M , 19 82. 2 C O N TR O LL IN G D IM E N SIO N : IN C H. 3 C O N FO R M S TO JE DE C O U TL IN E TO -252 AA . 4 D IM E N SIO N S SH O W N A RE BE FO R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.0 06 ). www.irf.com 7 IRG4RC10U Tape & Reel Information TO-252AA TR TRR TR L 1 6.3 ( .641 ) 1 5.7 ( .619 ) 16.3 ( .64 1 ) 15.7 ( .61 9 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 8 www.irf.com |
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